Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods

Author

Hyuck Sang Yim ; Jung Han Kang ; Ilgu Yun

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2008

fDate

4-6 Nov. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.

Keywords

MOSFET; S-parameters; equivalent circuits; semiconductor device models; statistical analysis; AC circuit model; RF characteristics; TSMC process; equivalent circuit model; frequency 50 MHz to 10 GHz; multi-finger MOSFET; s-parameters; size 0.35 mum; statistical methods; test structures; variability modeling; Circuit faults; Fault diagnosis; Field programmable gate arrays; Logic testing; MOSFETs; Manufacturing; Radio frequency; Statistical analysis; Table lookup; Tiles;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium (IEMT), 2008 33rd IEEE/CPMT International

Conference_Location

Penang

ISSN

1089-8190

Print_ISBN

978-1-4244-3392-6

Electronic_ISBN

1089-8190

Type

conf

DOI

10.1109/IEMT.2008.5507890

Filename

5507890