Title :
Wide temperature range compact modeling of SiGe HBTs for space applications
Author :
Luo, Lan ; Xu, Ziyan ; Niu, Guofu ; Chakraborty, Partha S. ; Cheng, Peng ; Thomas, Dylan ; Moen, Kurt ; Cressler, John D. ; Mudholkar, Mihir ; Mantooth, H. Alan
Author_Institution :
ECE Dept., Auburn Univ., Auburn, AL, USA
Abstract :
We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; Mextram; SiGe; SiGe HBT; Silicon-Germanium heterojunction bipolar transistors; most exquisite transistor model; space applications; wide temperature range compact modeling; Current measurement; Integrated circuit modeling; Mathematical model; Resistance; Temperature distribution; Temperature measurement; Mextram; SiGe HBT; compact model; cryogenic temperature;
Conference_Titel :
System Theory (SSST), 2011 IEEE 43rd Southeastern Symposium on
Conference_Location :
Auburn, AL
Print_ISBN :
978-1-4244-9594-8
DOI :
10.1109/SSST.2011.5753786
