Title :
Molecular beam epitaxial growth of quantum wire heterostructures using (GaP)x/(InAs)y short period superlattices on InP
Author :
Moy, A.M. ; Chou, L.J. ; Hsieh, K.C. ; Cheng, K.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Semiconductor quantum wires (QWR) are of great interest for their theoretically predicted advantages over the current quantum well (QW) technology. We report the application of the strain-induced lateral-layer ordering (SILO) process to a novel material system, spontaneously creating GaInAsP QWRs in situ on InP. Through molecular beam epitaxy, combinations of short-period superlattice (SPS) constituents are deposited on the growth surface
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; GaP-InAs; molecular beam epitaxial growth; semiconductor quantum wire heterostructure; short period superlattice; strain-induced lateral-layer ordering; Capacitive sensors; Carrier confinement; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Polarization; Quantum computing; Quantum mechanics; Temperature; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600037
