Selected Crystallization of Different Thickness Amorphous Silicon by 248nm Wavelength Excimer Laser

Arrangement selected crystallization of different thickness from 100nm to 350nm of amorphous silicon thin films on glass were prepared by 248nm wavelength UV excimer laser. A cleverly designed 5-dot-mask was used to reshape the laser beam and the sample was placed and scanned by laser on a XY-Axis translation stage with the movement controlled by a programmable controller accurately in order to optimize the process conditions, different kinds of laser energies and thickness of amorphous silicon thin films were utilized. The laser-crystallized samples were characterized by Raman spectrometer, metallurgical microscope and scanning electron microscope (SEM). From the results we tend to draw the following conclusion that the poly-Si seed layer can gain better crystallization quality with higher laser pulse energy and thinner amorphous silicon thin films.