Title :
Temperature dependent MOSFET RF large signal model incorporating self heating effects
Author :
Heo, D. ; Chen, E. ; Gebara, E. ; Yoo, S. ; Laskar, J. ; Anderson, T.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present a new temperature dependent large signal model with self heating and ambient temperature effects for power MOSFETs developed from on-wafer pulse I-V measurements at different ambient temperatures. The MOSFET channel current equation in the model has temperature parameters and continuity in high order derivatives to predict temperature effects and harmonics accurately. The data from the model with self heating effects demonstrates good agreement with measured S parameters and power characteristics including gain, efficiency, harmonic components and intermodulation powers in class AB operation.
Keywords :
UHF field effect transistors; equivalent circuits; harmonics; intermodulation; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; thermal analysis; MOSFET channel current equation; RF large signal model; S-parameters; ambient temperature effects; class AB operation; harmonics; intermodulation power; onwafer pulse I-V measurements; power MOSFETs; power characteristics; self heating effects; temperature dependent MOSFET model; temperature effects prediction; Equations; Heating; MOSFET circuits; Power MOSFET; Power measurement; Predictive models; Pulse measurements; RF signals; Radio frequency; Temperature dependence;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779791
