4G CMOS nanometer receivers for mobile systems: Challenges and solutions

Author

Rodriguez, Saul ; Rusu, Ana ; Ismail, Mohammed

Author_Institution

Sch. of ICT, R. Inst. of Technol. (KTH), Stockholm, Sweden

fYear

2009

fDate

9-10 July 2009

Firstpage

1

Lastpage

4

Abstract

This paper presents the design challenges and solutions for 4 G nanometer radio receivers for mobile devices. The specifications for the ZERO-IF/LOW-IF 4 G receiver architecture are derived. Limitations due to the use of low-voltage nanometer technologies are described and novel circuit technique mobile systems, such as wideband noise reduction, inductor-less peaking, passive mixing, and low flicker noise amplification are proposed. Finally, a 1.2-V 90 nm CMOS receiver front-end for the proposed WiMAX/LTE receiver is designed employing novel circuit techniques. The front-end covers 700 MHz - 6 GHz, providing a total gain of 34 dB, noise figure of 4 dB, flicker noise corner of 10 kHz, and a third order intercept point of -10 dBm/0 dBm, while consuming a total power of 10.2 mW.

Keywords

4G mobile communication; CMOS integrated circuits; WiMax; interference suppression; nanoelectronics; radio receivers; 4 G CMOS nanometer radio receiver; CMOS receiver front-end; WiMAX-LTE receiver; ZERO-IF-LOW-IF 4G receiver architecture; flicker noise amplification; frequency 700 MHz to 6 GHz; gain 34 dB; inductorless peaking; low-voltage nanometer technology; mobile system; noise figure 4 dB; passive mixing; power 10.2 mW; third order intercept point; wideband noise reduction; 1f noise; CMOS technology; Circuits; Gain; Nanoscale devices; Noise figure; Noise reduction; Receivers; WiMAX; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems, 2009. ISSCS 2009. International Symposium on

Conference_Location

Iasi

Print_ISBN

978-1-4244-3785-6

Electronic_ISBN

978-1-4244-3786-3

Type

conf

DOI

10.1109/ISSCS.2009.5206201

Filename

5206201