• DocumentCode
    2995551
  • Title

    Improvement of self-organized quantum wire structures formed in (GaP)n(InP)m superlattices by the growth on GaAs(011) substrate

  • Author

    Kim, S.J. ; Asahi, H. ; Takemoto, M. ; Asami, K. ; Gonda, S.

  • Author_Institution
    Inst. of Sci. & Ind. Res., Osaka Univ., Japan
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    Self-organized quantum wire (QWR) structures are formed by the gas source molecular beam epitaxy growth of (GaP)n(InP)m short period superlattices (n/m-SLs) on GaAs(011) substrate. Transmission electron microscopy observations show that the formed structures are elongated along the [011¯] direction with improved straightness and uniformity compared with those on GaAs(100). QWRs formed in (GaP)n(InP)m SL/In0.49Ga0.51P multilayers (n/m-SL/InGaP MTLs) by self-organization exhibit a strong polarization dependence of the photoluminescence (PL) emission intensity for the fixed incident beam polarization. Temperature insensitive variation of the PL peak energy is also observed in these self-organized QWR structures
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; transmission electron microscopy; (GaP)n(InP)m short period superlattice; GaAs; GaAs(011) substrate; GaP-InP; In0.49Ga0.51P; In0.49Ga0.51P multilayer; gas source molecular beam epitaxy; growth; photoluminescence emission intensity; polarization dependence; quantum wire; self-organization; transmission electron microscopy; Indium phosphide; Molecular beam epitaxial growth; Nonhomogeneous media; Photoluminescence; Polarization; Substrates; Superlattices; Temperature; Transmission electron microscopy; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600040
  • Filename
    600040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2995551