DocumentCode :
2995640
Title :
Analysis of switching properties of different high voltage IGBTs operating under hard-switching conditions
Author :
Blinov, A. ; Jalakas, T. ; Vinnikov, D. ; Laugis, J.
Author_Institution :
Dept. of Electr. Drives & Power Electron., TUT, Tallinn, Estonia
fYear :
2010
fDate :
4-6 Oct. 2010
Firstpage :
323
Lastpage :
326
Abstract :
This paper studies the switching properties of different IGBTs with blocking voltage of 6.5 kV operating under hard-switching conditions. The reference topology used in analysis is a half-bridge inverter with power rating of 300 kVA. Since the development of high-voltage IGBT based converters is often a tradeoff between compactness, complexity, efficiency and cost the different state of the art 6.5 kV IGBTs with collector currents of 200 A, 400 A, 600 A and 750 A were compared under the desired operation conditions. The most technically and economical feasible solution is proposed. Some generalizations and practical considerations are provided.
Keywords :
insulated gate bipolar transistors; invertors; switches; blocking voltage; collector currents; converters; current 200 A; current 400 A; current 600 A; current 750 A; half-bridge inverter; hard-switching conditions; high voltage IGBT; power 300 kW; reference topology; switching properties; voltage 6.5 kV; Converters; Insulated gate bipolar transistors; Inverters; Junctions; Logic gates; Switches; Switching frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Conference (BEC), 2010 12th Biennial Baltic
Conference_Location :
Tallinn
ISSN :
1736-3705
Print_ISBN :
978-1-4244-7356-4
Electronic_ISBN :
1736-3705
Type :
conf
DOI :
10.1109/BEC.2010.5630653
Filename :
5630653
Link To Document :
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