• DocumentCode
    2995640
  • Title

    Analysis of switching properties of different high voltage IGBTs operating under hard-switching conditions

  • Author

    Blinov, A. ; Jalakas, T. ; Vinnikov, D. ; Laugis, J.

  • Author_Institution
    Dept. of Electr. Drives & Power Electron., TUT, Tallinn, Estonia
  • fYear
    2010
  • fDate
    4-6 Oct. 2010
  • Firstpage
    323
  • Lastpage
    326
  • Abstract
    This paper studies the switching properties of different IGBTs with blocking voltage of 6.5 kV operating under hard-switching conditions. The reference topology used in analysis is a half-bridge inverter with power rating of 300 kVA. Since the development of high-voltage IGBT based converters is often a tradeoff between compactness, complexity, efficiency and cost the different state of the art 6.5 kV IGBTs with collector currents of 200 A, 400 A, 600 A and 750 A were compared under the desired operation conditions. The most technically and economical feasible solution is proposed. Some generalizations and practical considerations are provided.
  • Keywords
    insulated gate bipolar transistors; invertors; switches; blocking voltage; collector currents; converters; current 200 A; current 400 A; current 600 A; current 750 A; half-bridge inverter; hard-switching conditions; high voltage IGBT; power 300 kW; reference topology; switching properties; voltage 6.5 kV; Converters; Insulated gate bipolar transistors; Inverters; Junctions; Logic gates; Switches; Switching frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Conference (BEC), 2010 12th Biennial Baltic
  • Conference_Location
    Tallinn
  • ISSN
    1736-3705
  • Print_ISBN
    978-1-4244-7356-4
  • Electronic_ISBN
    1736-3705
  • Type

    conf

  • DOI
    10.1109/BEC.2010.5630653
  • Filename
    5630653