Title :
800MHz Single-Photon Detection at 1550-nm Using an InGaAs/InP Avalanche Photodiode Operated with a Sinusoidal Gating
Author :
Namekata, N. ; Sasamori, S. ; Inoue, S.
Author_Institution :
Institute of Quantum Science, Niohon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo, 101-8308 Japan, nnao@phys.cst.nihon-u.ac.jp
Abstract :
Single-photon detection at 1550-nm using an InGaAs/InP-avalanche photodiode operated with an 800MHz sinusoidal gating was reported. The quantum efficiency was 8.5% with the dark count probability of 9.2X10-6 and the overall afterpulsing probability of 6.0%.
Keywords :
Avalanche photodiodes; Capacitors; Circuits; Electric resistance; Frequency; Indium gallium arsenide; Indium phosphide; Optical devices; Optical fibers; Voltage;
Conference_Titel :
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location :
Cannes, France
Print_ISBN :
978-2-912328-39-7
Electronic_ISBN :
978-2-912328-39-7
DOI :
10.1109/ECOC.2006.4801376
