An S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment

Author

Wei Xiong ; Larson, L.E.

Author_Institution

Qualcomm Inc., San Diego, CA, USA

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

497

Abstract

A discrete low-noise amplifier designed to operate in a mobile wireless environment is presented. The amplifier utilizes two cascaded GaAs FETs to achieve 25 dB gain and 0.9 dB noise figure at 2.5 GHz. An active bias control circuit automatically and continuously adjusts drain-source currents of the FETs to maintain power consumption at 33 milliwatts in nominal small-signal conditions, and to provide elevated input IP3 and reduced noise figure during jamming. A 15 dB improvement in input IP3 is achieved in large-signal operation.

Keywords

UHF amplifiers; circuit noise; field effect transistor circuits; mobile radio; 0.9 dB; 2.5 GHz; 25 dB; 33 mW; GaAs; S-band LNA; active bias control circuit; cascaded GaAs FETs; dynamic range; input IP3; large-signal operation; low-noise amplifier; mobile wireless environment; power consumption; self-adjusting bias; small-signal conditions; Dynamic range; Energy consumption; FETs; Jamming; Linearity; Low-noise amplifiers; Noise figure; Power amplifiers; Voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779810

Filename

779810