Title :
A surface-normal reflective optical modulator at a wavelength of 1.3 μm using the Wannier-Stark effect of the InP/InGaAsP superlattice
Author :
Kagawa, Toshiaki ; Tadanaga, Osamu ; Matsuoka, Yutaka
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
A surface-normal reflective optical modulator for the wavelength of 1.3 μm was investigated using the Wannier-Stark effect of an InP/InGaAsP superlattice (SL). Electroabsorption properties of two devices with different miniband widths were compared. It was found that the modulator with a larger miniband width has a larger extinction ratio. The effect of the electric field distribution in the thick SL region was discussed. A chirped superlattice was introduced to compensate for the electric field distribution
Keywords :
III-V semiconductors; Stark effect; Wannier functions; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; semiconductor superlattices; 1.3 micron; InP-InGaAsP; Wannier-Stark effect; chirped superlattice; electric field distribution; electroabsorption; extinction ratio; miniband width; surface-normal reflective optical modulator; Absorption; Indium phosphide; Optical devices; Optical modulation; Optical superlattices; Optical surface waves; Reflectivity; Surface waves; Temperature; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600041
