DocumentCode
2995795
Title
An empirical-table based FET model
Author
Angelov, I. ; Rorsman, N. ; Stenarson, J. ; Garcia, M. ; Zirath, H.
Author_Institution
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
2
fYear
1999
fDate
13-19 June 1999
Firstpage
525
Abstract
A new large signal field effect transistor (FET) model combining empirical and table based models was developed and investigated experimentally. The Chalmers empirical model was used as a spline function for the table based model. Combining models improves accuracy and simplifies and speeds extraction. The procedure can be applied for other types of devices.
Keywords
equivalent circuits; field effect transistors; semiconductor device models; Chalmers empirical model; HEMT; MESFET; MOSFET; empirical-table based FET model; field effect transistor model; large signal FET model; spline function; table based model; Breakdown voltage; Charge measurement; Current measurement; Equations; Equivalent circuits; FETs; Frequency measurement; Intrusion detection; Scattering parameters; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779816
Filename
779816
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