Title :
Long-term stability of passive millimeterwave circuits on high-resistivity silicon substrates
Author :
Rasshofer, R.H. ; Biebl, E.M. ; Strohm, K.M. ; Luy, J.F.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Abstract :
We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz showed excellent long-term stability of the circuits. No significant difference between chips with and without SiO/sub 2/ passivation layer has been found though chips with passivation showed larger photosensitivity and higher loss.
Keywords :
MIMIC; circuit stability; elemental semiconductors; environmental testing; integrated circuit testing; losses; microstrip circuits; silicon; thermal stresses; 38 GHz; 400 h; Si; harsh environmental conditions; high-resistivity silicon substrates; humidity; long-term stability; losses; microstrip circuits; organic vapors; passive millimeter-wave circuits; photosensitivity; test structures; thermal stress; Circuit stability; Circuit testing; Conductivity; Dielectric losses; Dielectric substrates; Microstrip; Passivation; Radio frequency; Semiconductor device measurement; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779830
