A wideband CPW-to-microstrip transition for millimeter-wave packaging

Author

Ellis, T.J. ; Raskin, J.P. ; Katehi, L.P.B. ; Rebeiz, G.M.

Author_Institution

Radiat. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

629

Abstract

A broadband single layer vertical transition from CPW to microstrip has been developed for multilayer millimeter-wave circuits. The transition has exceptionally wide bandwidth and presents low insertion and return losses. A transition has been fabricated on a 100 /spl mu/m silicon wafer that shows approximately 0.3 dB of insertion loss and better than 10 dB return loss over 75-110 GHz. This transition can be used for the vertical integration of multi-layer millimeter wave circuits and packaging.

Keywords

MIMIC; coplanar waveguide components; integrated circuit packaging; losses; microstrip circuits; microstrip transitions; millimetre wave integrated circuits; waveguide transitions; 0.3 dB; 10 dB; 100 micron; 75 to 110 GHz; EHF; Si; broadband single layer vertical transition; low insertion loss; low return loss; millimeter-wave packaging; multilayer MM-wave circuits; wideband CPW-to-microstrip transition; Coplanar waveguides; Electromagnetic coupling; Microstrip; Microwave circuits; Millimeter wave technology; Packaging; Power dividers; Slotline; Space technology; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779840

Filename

779840