Title :
Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing
Author :
Xiaoming Huang ; Chenfei Wu ; Hai Lu ; Fangfang Ren ; Dunjun Chen ; Yanli Liu ; Guang Yu ; Rong Zhang ; Youdou Zheng ; Yongjin Wang
Author_Institution :
Jiangsu Provincial Key Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, China
Abstract :
In this letter, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) is fabricated, which consists of an enhancement mode driver and a depletion mode load. By applying an area-selective laser annealing technique, the threshold voltage (Vth) of the load TFT could be tuned from positive to negative gate voltage. Based on X-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser annealing. Meanwhile, compared with conventional inverters with an enhancement mode load, the proposed inverter shows much improved switching characteristics, including output swing range close to 100% full swing as well as an enhanced output voltage gain from -1.5 to -20.5 V/V.
Keywords :
X-ray photoelectron spectra; gallium compounds; indium compounds; invertors; laser beam annealing; thin film transistors; zinc compounds; InGaZnO; TFT; X-ray photoelectron spectroscopy analyses; amorphous thin-film transistors; area-selective laser annealing technique; depletion mode load; device channel; enhancement mode driver; large-swing inverter; negative gate voltage; negative shift; oxygen vacancy concentration; positive gate voltage; switching characteristic improvement; Annealing; Inverters; Laser beams; Laser modes; Thin film transistors; X-ray lasers; a-IGZO TFT; depletion mode; inverter; laser annealing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2345412
