Title :
New challenges on leakage current improvement in tunnel FET by using low-k oxide
Author :
Vadizadeh, Mahdi ; Davaji, Benyamin ; Fathipour, Morteza
Author_Institution :
Dept of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
Abstract :
In this paper, we have shown that off-state current in the Tunneling Field Effect Transistor (TFET) can be reduced dramatically by using a low-k oxide and employing gate work function engineering. In order to enhance Ion/Ioff ratio in the TFET, the effect of second gate employing has been investigated, hence using a low-k oxide for the gate near the drain side (Gate2) resulted in omission of fringing field effects. Therefore, the leakage current is decreased. Also a work function engineering method has been employed for the gate near the source (Gate1) to further reduce the off state current.
Keywords :
field effect transistors; tunnel transistors; leakage current; low-k oxide; tunnel FET; tunneling field effect transistor; Analytical models; CMOS technology; Electrons; FETs; Leakage current; MOSFET circuits; P-i-n diodes; Temperature; Tunneling; Voltage;
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
DOI :
10.1109/ASQED.2009.5206282
