Title :
An analytic channel potential based model for dynamic depletion surrounding-gate mosfets with arbitrary doping level
Author :
Zhang, Lining ; Zhang, Jian ; Liu, Feng ; Chen, Lin ; Xu, Yiwen ; Zhou, Wang ; He, Frank
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Beijing, China
Abstract :
In this paper an analytic channel potential-based model is proposed to predict the dynamic depletion behavior of surrounding-gate (SRG) MOSFETs with arbitrary doping level. The key input voltage equation is derived out by solving Poisson´s equation approximately with arbitrary doping in the cylindrical coordinate. Combined with the surface-centric potential relationship, the electrostatic potential solution along the radius of both intrinsic and heavily doped SRG is obtained. With the potential solutions at the source and drain sides of the channel, the analytic drain current model is provided to calculate the current characteristics of the SRG MOSFET. The presented model can realize transition from partial depletion to full depletion of SRG MOSFET, which is validated by numerical simulation.
Keywords :
MOSFET; Poisson equation; Poisson equation; analytic channel potential; analytic drain current model; arbitrary doping level; dynamic depletion behavior; electrostatic potential solution; metal-oxide-semiconductor field effect transistors; numerical simulation; surface-centric potential relationship; surrounding-gate MOSFET; voltage equation; Doping; Educational technology; Electrostatics; Integrated circuit technology; Laboratories; MOSFETs; Nanoscale devices; Numerical simulation; Poisson equations; Semiconductor process modeling;
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
DOI :
10.1109/ASQED.2009.5206285
