DocumentCode
2997037
Title
Realization of self-bias humidity sensor, based on ZnO nanosheets
Author
Modaresinezhad, Elham ; Darbari, Sara
Author_Institution
Dept. Electr. & Comput. Eng., Tarbiat Modares Univ., Tehran, Iran
fYear
2015
fDate
10-14 May 2015
Firstpage
1149
Lastpage
1153
Abstract
ZnO nanowires, among other peizoelectric nanostructures, have been frequently applied to realize nanogenerators (NGs). However, it has been recently shown that ZnO nanosheets have higher mechanical strength than the nanowires, which entitles them as another candidate in this field of application. In this paper, we report fabrication of a piezoelectric NG based on ZnO nanosheets and then propose the fabricated NG as an efficient self-bias humidity sensor. ZnO nanosheets are grown by hydrothermal method, on Al substrate. The measured output power of NG is about 372 nW/g.cm2. It is believed that exposing the NG to gas molecules, changes the density of free carriers in the nanosheets, which alters the output power of the NG. Our study demonstrates that the output power increases to about 1180 nW/g.cm2, when the NG is exposed to humidity with a Relative humidity (RH) about 28%. Hence, a sensitivity (S=ΔP/P0) of about 5×10-3 is achieved at RH of 28%, for the fabricated self-bias humidity sensor.
Keywords
II-VI semiconductors; carrier density; humidity sensors; nanowires; piezoelectric materials; wide band gap semiconductors; zinc compounds; ZnO; aluminum substrate; free carrier density; hydrothermal method; nanogenerators; nanowires; piezoelectric nanostructures; relative humidity; self-bias humidity sensor; zinc oxide nanosheets; Force; Humidity; II-VI semiconductor materials; Nanowires; Power generation; Zinc oxide; Humidity; Nanogenerator; Self-bias sensor; ZnO nanosheets;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location
Tehran
Print_ISBN
978-1-4799-1971-0
Type
conf
DOI
10.1109/IranianCEE.2015.7146386
Filename
7146386
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