Improved excimer laser planarization of AlSi with addition of Ti or Cu

Author

Woratschek, B. ; Carey, P. ; Stolz, M. ; Bachmann, F.

Author_Institution

Siemens AG, Munich, West Germany

fYear

1989

fDate

12-13 Jun 1989

Firstpage

309

Lastpage

314

Abstract

A report is presented on AlSi(1%), AlSi(1%)Ti(0.1%), and AlSi(1%)Cu(0.5%) alloy planarization results using a XeCl excimer laser. The authors find that excellent planarization is achieved when filling submicron contact hole structures. However, for the AlSi alloy, spot ablation occurs which is characterized by the removal of metal. This is not the case for the AlSiCu and the AlSiTi alloys. The best morphology is obtained for the AlSiTi alloy with large areas completely free of ablation and pitting. These results indicate that reliable planarization over large device areas can be achieved using the AlSiTi alloy

Keywords

VLSI; aluminium alloys; copper alloys; excimer lasers; laser beam applications; metallisation; silicon alloys; titanium alloys; xenon compounds; AlSi alloy; AlSiCu alloy; AlSiTi alloy; ULSI; VLSI; XeCl excimer laser; excimer laser planarization; filling submicron contact hole structures; metallisation planarisation; morphology; multilevel interconnection; planarization over large device areas; spot ablation; via filling; via hole filling; Copper alloys; Filling; Metallization; Optical pulses; Planarization; Production; Rapid thermal processing; Surfaces; Titanium alloys; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1989.77989

Filename

77989