Title :
A novel 4H-SiC UMOSFET_ACCUFET with large blocking voltage
Author :
Peyvast, Negin ; Fathipour, Morteza
Author_Institution :
Device & Process Modeling & Simulation Lab., Univ. of Tehran, Tehran, Iran
Abstract :
In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar´s doping concentrations as well as widths.
Keywords :
power MOSFET; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC; large-blocking voltage; power UMOSFET-ACCUFET; vertical N pillar doping concentration; vertical P pillar doping concentration; Computational modeling; Doping; Electric breakdown; Electric resistance; Electrons; Guidelines; MOSFET circuits; Protection; Thermal conductivity; Voltage;
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
DOI :
10.1109/ASQED.2009.5206303
