Analytical modeling of potential distribution in trigate SOI MOSFETs

Author

Ghanatian, Hamdam ; Hosseini, Seyed Ebrahim

Author_Institution

Electr. Eng. Dept., Ferdowsi Univ. of Mashhad, Mashhad, Iran

fYear

2015

fDate

10-14 May 2015

Firstpage

1240

Lastpage

1244

Abstract

In this paper a new 3-D analytical model for the potential distribution in nano-scaled lightly doped trigate silicon on insulator MOSFETs in the subthreshold regime, is proposed. This model is derived by solving 3-D Poisson´s equation and using parabolic potential distribution assumption between lateral gates. The proposed analytic model is investigated and compared with the obtained results from 3-D simulations using ATLAS device simulator. It is demonstrated that analytic solution has a good accuracy to predict potential distribution along the silicon body.

Keywords

MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; 3D Poisson´s equation; 3D analytical model; 3D simulations; ATLAS device simulator; lateral gates; nano-scaled lightly doped trigate silicon on insulator MOSFET; parabolic potential distribution assumption; subthreshold regime; trigate SOI MOSFET; Conferences; Decision support systems; Electrical engineering; Silicon; 3-D Poissons equation; analitical model; parabolic potential distribution; trigate SOI MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2015 23rd Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4799-1971-0

Type

conf

DOI

10.1109/IranianCEE.2015.7146405

Filename

7146405