Dielectric film deposition by atmospheric pressure and low temperature CVD using TEOS, ozone, and new organometallic doping sources

Author

Nishimoto, Y. ; Tokumasu, N. ; Fujino, K. ; Maeda, K.

Author_Institution

Semicond. Process Lab. Co., Ltd., Tokyo, Japan

fYear

1989

fDate

12-13 Jun 1989

Firstpage

382

Lastpage

389

Abstract

An atmospheric-pressure CVD technology using TEOS, ozone, and new organometallic doping sources, such as tris(trimethylsilil)borate, ((CH ₃)₃SiO)₃B, is described. This technology offers excellent dielectric films with respect to step coverage, film stress, moisture resistance, and thermal flow characteristics. Nondoped silicon dioxide and BSG films are deposited to cover conformably even a deeply trenched substrate. They can be used as a dielectric film between a polysilicon and an aluminum layer or between aluminum layers without any planarization process. BPSG films showed good step coverage, and could be smoothly reflowed at a low temperature

Keywords

VLSI; boron compounds; chemical vapour deposition; dielectric thin films; glass; metallisation; silicon compounds; APCVD; B2O3-P2O5-SiO2; B2O3-SiO2; BPSG films; BSG films; TEOS; VLSI; atmospheric-pressure CVD; deeply trenched substrate; dielectric films; film stress; low temperature CVD; moisture resistance; multilevel interconnection; organometallic doping sources; smoothly reflowed; step coverage; thermal flow characteristics; tris(trimethylsilil)borate; Aluminum; Dielectric films; Dielectric substrates; Doping; Moisture; Planarization; Semiconductor films; Silicon compounds; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1989.77998

Filename

77998