Title :
A new graphene-on-silicon solar cells by introducing an interlayer of silicon quantum dots
Author :
Arefinia, Zahra ; Asgari, Asghar
Author_Institution :
Res. Inst. for Appl. Phys. & Astron., Univ. of Tabriz, Tabriz, Iran
Abstract :
In this paper, a new structure of Gr/Si solar cells by introducing a layer of silicon quantum dots (SiQDs) between graphene and silicon is proposed to engineer the Gr/Si interface for improving device performance. The simulation results have shown that the introduction of the SiQDs can effectively increase the open-circuit voltage of the solar cells. As a result, a maximum efficiency of 16.72% can be achieved for the Gr-SiQDs-Schottky barrier solar cell.
Keywords :
Schottky diodes; elemental semiconductors; graphene devices; semiconductor quantum dots; silicon; solar cells; C-Si; Gr-SiQD-Schottky barrier solar cell; Gr/Si interface; efficiency 16.72 percent; graphene-on-silicon solar cells; open-circuit voltage; silicon quantum dots interlayer; Decision support systems; Electrical engineering; Graphene; Performance evaluation; Photovoltaic cells; Quantum dots; Silicon; graphene; quantum dot; solar cell;
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
DOI :
10.1109/IranianCEE.2015.7146442
