Hot electron-induced MOS transconductance degradation

Author

Yip, K.L. ; Wong, H. ; Cheng, Y.C.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

fYear

1995

fDate

34881

Firstpage

10

Lastpage

14

Abstract

This work studies both the temperature and bias dependent transconductance degradation due to hot electron stressing in n-channel MOS transistors. Thermal oxide (OX), nitrided oxide (NOX), and nitrogen-annealed nitrided oxide (NNOX) are used as the device gate dielectrics. Results show that NOX device has the smallest transconductance degradation (<3%) at room temperature and NNOX has the largest degradation (>20%) at 200 K because of the large amount of electrons being captured by the shallow traps and large Fuchs parameter for coulomb scattering. We also found that the temperature dependence and the hot-electron fluence effect of the transconductance degradation can be correlated with the hot electron-induced threshold-voltage shift. However, for electric field dependence, it is governed by the scattering parameters as well

Keywords

MOSFET; annealing; electron traps; hot carriers; semiconductor device reliability; 200 K; Fuchs parameter; MOS transconductance degradation; NNOX; NOX; coulomb scattering; device gate dielectrics; electric field dependence; hot electron-induced degradation; hot-electron fluence effect; n-channel MOS transistors; nitrided oxide; nitrogen-annealed nitrided oxide; scattering parameters; shallow traps; thermal oxide; threshold-voltage shift; Dielectric devices; Dielectric substrates; Electron traps; MOSFETs; Scattering parameters; Silicon; Temperature dependence; Temperature distribution; Thermal degradation; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong

Print_ISBN

0-7803-2919-8

Type

conf

DOI

10.1109/HKEDM.1995.520635

Filename

520635