A trench-sidewall single-wafer-MEMS technology and its typical application in high-performance accelerometers

Author

Li, Xinxin ; Cheng, Baoluo ; Wang, Yuelin ; Gu, Lei ; Dong, Jian ; Yang, Heng ; Song, Zhaohui

Author_Institution

Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

43

Lastpage

46

Abstract

A trench-sidewall technology is developed for single-wafer-processed MEMS of in-plane lateral configuration. The technology is capable of integrating both piezoresistive/capacitive sensors and electrostatic actuators on trench-sidewalls. The developed technology has been successfully applied to a cantilever-shaped accelerometer with both piezoresistors and electrostatic self-testing electrodes integrated on the trench-sidewalls. Besides satisfactory electric principles of the trench-sidewall elements obtained, measurement results for acceleration sensing and electrostatic self-testing agree well with design.

Keywords

accelerometers; capacitive sensors; electrostatic devices; microsensors; piezoresistive devices; semiconductor technology; MEMS technology; acceleration sensing; cantilever-shaped accelerometer; capacitive sensors; electrostatic actuators; electrostatic self-testing electrodes; high-performance accelerometers; in-plane lateral configuration; piezoresistive sensors; piezoresistors; single wafer-processing; trench-sidewall elements; trench-sidewall technology; Accelerometers; Built-in self-test; Capacitive sensors; Electric variables measurement; Electrodes; Electrostatic actuators; Electrostatic measurements; Micromechanical devices; Piezoresistance; Piezoresistive devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419059

Filename

1419059