Title :
A trench-sidewall single-wafer-MEMS technology and its typical application in high-performance accelerometers
Author :
Li, Xinxin ; Cheng, Baoluo ; Wang, Yuelin ; Gu, Lei ; Dong, Jian ; Yang, Heng ; Song, Zhaohui
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
A trench-sidewall technology is developed for single-wafer-processed MEMS of in-plane lateral configuration. The technology is capable of integrating both piezoresistive/capacitive sensors and electrostatic actuators on trench-sidewalls. The developed technology has been successfully applied to a cantilever-shaped accelerometer with both piezoresistors and electrostatic self-testing electrodes integrated on the trench-sidewalls. Besides satisfactory electric principles of the trench-sidewall elements obtained, measurement results for acceleration sensing and electrostatic self-testing agree well with design.
Keywords :
accelerometers; capacitive sensors; electrostatic devices; microsensors; piezoresistive devices; semiconductor technology; MEMS technology; acceleration sensing; cantilever-shaped accelerometer; capacitive sensors; electrostatic actuators; electrostatic self-testing electrodes; high-performance accelerometers; in-plane lateral configuration; piezoresistive sensors; piezoresistors; single wafer-processing; trench-sidewall elements; trench-sidewall technology; Accelerometers; Built-in self-test; Capacitive sensors; Electric variables measurement; Electrodes; Electrostatic actuators; Electrostatic measurements; Micromechanical devices; Piezoresistance; Piezoresistive devices;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419059
