Title :
A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs
Author :
Kim, D.H. ; Kim, Jin Young ; Huh, M. ; Hwang, Yoon Sung ; Park, J.M. ; Han, D.H. ; Kim, Dong In ; Cho, M.H. ; Lee, B.H. ; Hwang, H.K. ; Song, J.W. ; Kang, N.J. ; Ha, G.W. ; Song, S.S. ; Shim, M.S. ; Kim, S.E. ; Kwon, J.M. ; Park, Bong Joo ; Oh, H.J. ; Kim
Author_Institution :
Semicond. R & D Div., Samsung Electron. Co., Yongin, South Korea
Abstract :
Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.
Keywords :
DRAM chips; 2.3 nm; 80 nm; COB DRAM; MESH capacitor; MIS dielectric technology; Si3N4; mechanical instability; one cylindrical storage node DRAM; stacked capacitor; virtually unlimited height; Bridge circuits; Capacitance; Capacitors; Dielectric materials; Glass; Manufacturing processes; Random access memory; Semiconductor device manufacture; Strips; Tin;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419067
