Title :
Off-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques
Author :
Xu, Zeng ; Lai, P.T. ; Ng, W.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
Off-state gate current of n-channel MOSFETs with OX, RONO, N20N, and N20G oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in the low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N20G oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, in view of gate leakage, the method of nitridizing pre-grown thermal oxide is more feasible than directly growing oxide in N2O ambient, especially in leakage sensitive applications, such as very-low-power battery-based circuits, DRAM cells, etc
Keywords :
MOSFET; dielectric thin films; leakage currents; semiconductor device reliability; tunnelling; DRAM cells; N-channel MOSFET; N20G oxides; N20N oxides; N2O; OX oxides; RONO oxides; battery-based circuits; gate current conduction mechanism; gate dielectrics; leakage sensitive applications; off-state gate leakage current; reoxidized NH3-nitrided oxide; thermal oxide; trap-assisted tunneling mechanism; Degradation; Dielectric measurements; Electrons; Hot carriers; Implants; Leakage current; MOS devices; MOSFET circuits; Nonvolatile memory; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong
Print_ISBN :
0-7803-2919-8
DOI :
10.1109/HKEDM.1995.520637
