Title :
Proposal of new HfSiON CMOS fabrication process (HAMDAMA) for low standby power device
Author :
Aoyama, T. ; Maeda, T. ; Torii, K. ; Yamashita, K. ; Kobayashi, Y. ; Kamiyama, S. ; Miura, T. ; Kitajima, H. ; Arikado, T.
Author_Institution :
Semicond. Leading Edge Technol., Inc., Ibaraki, Japan
Abstract :
The authors propose a practical half-masked Damascene-like full silicidation (HAMDAMA) process to fabricate dual gate HfSiON CMOSFET in which poly-Si and fully silicided (FUSI) NiSi gates are used for n-FET and p-FET, respectively. Using this process, Ion in p-FET was improved by thinner Teff(inv) and higher hole mobility than the conventional poly-Si gate process.
Keywords :
CMOS integrated circuits; MOSFET; hafnium compounds; hole mobility; low-power electronics; manufacturing processes; CMOS fabrication process; HAMDAMA; HfSiON-SiO2; fully silicided gates; half-masked Damascene-like full silicidation; hole mobility; low standby power device; n-FET; p-FET; poly-Si gate process; poly-Si gates; CMOS process; CMOSFETs; Counting circuits; Dielectrics; Electrodes; Fabrication; Hafnium; Nickel; Proposals; Silicidation;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419075
