On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET´s

We propose a new methodology to characterize the negative bias temperature instability (NBTI) degradation without inherent recovery. The extracted parameters are the linear drain current, the threshold voltage and the transconductance. We compare the new and the usual methodologies and show a logarithmic time dependence of both the degradation and the recovery. The hole trapping (detrapping) is directly correlated to the V_T degradation (recovery), and plays the main role in the NBTI in ultra-thin gate-oxide PMOSFET´s.