Title :
Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech. Univ., Kowloon, Hong Kong
Abstract :
In this paper we report studies on the origin of low-frequency excess noise in GaAs/Al0.4Ga0.6As double barrier resonant tunneleing diodes (RTDs). The RTDs were grown by molecular-beam epitaxy (MBE) on n+ (100) GaAs substrates. The double-barrier structure consists of 32-Å-thick Al0.4Ga0.6As barriers and a 48-Å-thick GaAs quantum well. The band discontinuity is about 0.325 eV. The background impurity concentration in the double-barrier structure is approximately 1015 cm-3
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; impurity distribution; molecular beam epitaxial growth; resonant tunnelling diodes; semiconductor device noise; semiconductor epitaxial layers; semiconductor growth; 0.325 eV; G-R noise; GaAs-AlGaAs; background impurity concentration; band discontinuity; double barrier resonant tunneling diodes; low-frequency excess noise; molecular-beam epitaxy; Acoustical engineering; Diodes; Fluctuations; Fluid flow; Gallium arsenide; Impurities; Noise shaping; Packaging; Resonance; Resonant tunneling devices;
Conference_Titel :
Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong
Print_ISBN :
0-7803-2919-8
DOI :
10.1109/HKEDM.1995.520638
