DocumentCode
2998864
Title
A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs
Author
Kufluoglu, Haldun ; Alam, Muhammad Ashraful
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
113
Lastpage
116
Abstract
A unification of time-exponents for negative bias temperature instability (NBTI) and hot carrier injection (HCI) is established under the geometric interpretation of interface trap generation. Resolving the fundamental inconsistencies, a numerical reaction-diffusion (R-D) model that agrees with recent measurements is developed. The implications regarding the degradations of future sub-100 nm planar and surround-gate MOSFETs are presented.
Keywords
MOSFET; hot carriers; integrated circuit modelling; interface states; 100 nm; HCI time exponents; geometrical unification; hot carrier injection; interface trap generation; negative bias temperature instability; numerical reaction-diffusion model; surround-gate MOSFET; ultra-scaled planar MOSFET; Computer interfaces; Degradation; Geometry; Hot carrier injection; Human computer interaction; Hydrogen; MOSFETs; Niobium compounds; Solid modeling; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419081
Filename
1419081
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