A 1.5-V high-Q CMOS active inductor for IF/RF wireless applications

Author

Thanachayanont, Apinunt

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

fYear

2000

fDate

2000

Firstpage

654

Lastpage

657

Abstract

In this paper, a new circuit configuration of VHF CMOS transistor-only active inductor which allows very high frequency operation under low power supply voltages (<2 V) is proposed. Gain enhancement techniques are applied to reduce the inductor losses achieving high-Q and wide operating bandwidth. HSPICE simulations using process parameters from a 0.35-μm CMOS technology show that the proposed floating active inductor operates under a single 1.5-V power supply voltage, exhibiting a self-resonant frequency of 2.5 GHz and a quality factor greater than 120 (phase errors <0.50) over the operating frequencies extending from 500 MHz to 1 GHz

Keywords

CMOS integrated circuits; Q-factor; SPICE; circuit simulation; inductors; losses; low-power electronics; 0.35 micron; 1.5 V; 2.5 GHz; 500 MHz to 1 GHz; HSPICE simulations; VHF; floating active inductor; gain enhancement techniques; high-Q CMOS active inductor; inductor losses; low power supply voltages; operating bandwidth; operating frequencies; phase errors; process parameters; quality factor; self-resonant frequency; transistor-only active inductor; Active inductors; Bandwidth; CMOS process; CMOS technology; Circuit simulation; Low voltage; Power supplies; Q factor; Radio frequency; VHF circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. IEEE APCCAS 2000. The 2000 IEEE Asia-Pacific Conference on

Conference_Location

Tianjin

Print_ISBN

0-7803-6253-5

Type

conf

DOI

10.1109/APCCAS.2000.913605

Filename

913605