DocumentCode :
2998968
Title :
Physical model of BTI, TDDB and SILC in HfO2-based high-k gate dielectrics
Author :
Torii, Kentaro ; Kitajima, H. ; Arikado, T. ; Shiraishi, K. ; Miyazaki, S. ; Yamabe, K. ; Boero, M. ; Chikyow, T. ; Yamada, K.
Author_Institution :
Semicond. Leading Edge Technol., Ibaraki, Japan
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
129
Lastpage :
132
Abstract :
The microscopic mechanism of the degradation occurring in HfO2-based high-k/IL dual layer gate insulator has been investigated. The hole-injection-induced release of hydrogen from Si-H terminations causes IL-breakdown. This mechanism accelerates NBTI. Defects due to electron-trapped oxygen vacancies are the origin of trap-assisted tunneling, causing SILC in the electron current and PBTI.
Keywords :
electric breakdown; electron traps; hafnium compounds; integrated circuit modelling; leakage currents; BTI; HfO2; SILC; TDDB; electron current; electron-trapped oxygen vacancies; gate insulator; high-k gate dielectrics; microscopic mechanism; physical model; trap-assisted tunneling; Acceleration; Degradation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; Insulation; Microscopy; Niobium compounds; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419085
Filename :
1419085
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2998968
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