• DocumentCode
    2999057
  • Title

    Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment

  • Author

    Laux, S.E.

  • Author_Institution
    IBM Res. Div., T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    Two-dimensional (2D) Ge n-channel DGFETs with LG = 7.5 nm and tGe = 2 nm are simulated in the ballistic limit. The best intrinsic switching performance is found for [1 1 0]/[4 4 2 1] transport/quantization alignments, and is 13% better than Ge [1 1 0]/[1 1 0] and 23% better than Si [1 0 0]/[0 0 1] or [1 1 0]/[0 0 1].
  • Keywords
    ballistic transport; circuit simulation; elemental semiconductors; field effect transistors; 7.5 nm; Ge; Ge n-channel DGFET; arbitrary crystallographic alignment; intrinsic switching performance; transport/quantization alignments; Analytical models; Boundary conditions; Crystallography; Geometry; Insulation; Neodymium; Quantization; Research and development; Schrodinger equation; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419088
  • Filename
    1419088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2999057