Title :
Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment
Author_Institution :
IBM Res. Div., T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Two-dimensional (2D) Ge n-channel DGFETs with LG = 7.5 nm and tGe = 2 nm are simulated in the ballistic limit. The best intrinsic switching performance is found for [1 1 0]/[4 4 2 1] transport/quantization alignments, and is 13% better than Ge [1 1 0]/[1 1 0] and 23% better than Si [1 0 0]/[0 0 1] or [1 1 0]/[0 0 1].
Keywords :
ballistic transport; circuit simulation; elemental semiconductors; field effect transistors; 7.5 nm; Ge; Ge n-channel DGFET; arbitrary crystallographic alignment; intrinsic switching performance; transport/quantization alignments; Analytical models; Boundary conditions; Crystallography; Geometry; Insulation; Neodymium; Quantization; Research and development; Schrodinger equation; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419088
