• DocumentCode
    2999073
  • Title

    Bandstructure effects in ballistic nanoscale MOSFETs

  • Author

    Rahman, Anisur ; Klimeck, Gerhard ; Boykin, Timothy B. ; Lundstrom, Mark

  • Author_Institution
    Sch. of ECE, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    139
  • Lastpage
    142
  • Abstract
    Bandstructure effects on ballistic transport in ultra-thin-body unstrained and strained MOSFETs are investigated using a 20 band sp3d5s*-SO semi-empirical tight-binding model. It is observed that for unstrained Ge n-devices, the effective mass approach fails below 3 nm. Additionally, in strained Si p-MOSFETs, orientation of uniaxial compressive strain axis relative to quantum confinement direction substantially affects performance.
  • Keywords
    MOSFET; ballistic transport; band structure; elemental semiconductors; germanium; nanoelectronics; semiconductor device models; silicon; Ge; Si; ballistic nanoscale MOSFET; bandstructure effects; quantum confinement direction; uniaxial compressive strain axis; Atomic layer deposition; Atomic measurements; Ballistic transport; Capacitive sensors; Effective mass; Electrostatics; Equivalent circuits; MOSFETs; Particle scattering; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419089
  • Filename
    1419089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2999073