Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress

Author

Wang, E. ; Matagne, P. ; Shifren, L. ; Obradovic, B. ; Kotlyar, R. ; Cea, S. ; He, J. ; Ma, Z. ; Nagisetty, R. ; Tyagi, S. ; Stettler, M. ; Giles, M.D.

Author_Institution

TCAD Div., Intel Corp., Santa Clara, CA, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

147

Lastpage

150

Abstract

We have developed a quantum anisotropic transport model for holes which, for the first time, allows mobility to be studied under both uniaxial and arbitrary stress in PMOS inversion layers. The anisotropic bandstructure of a 2D quantum gas is computed from a 6-band stress dependent k.p Hamiltonian. Our unique momentum-dependent scattering model also captures the anisotropy of scattering. A comprehensive study has been performed for uniaxial stress, biaxial stress, and their nonlinear interactions. The results are compared with device bending data and piezoresistance data, showing very good agreement.

Keywords

elemental semiconductors; hole mobility; inversion layers; silicon; stress effects; 2D quantum gas; arbitrary stress; biaxial stress; hole mobility; momentum-dependent scattering model; quantum mechanical calculation; silicon inversion layers; uniaxial stress; Acoustic scattering; Anisotropic magnetoresistance; Compressive stress; Optical scattering; Optical surface waves; Particle scattering; Phonons; Quantum computing; Quantum mechanics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419091

Filename

1419091