Title :
Stress migration resistance of Al-Si-Pd alloy interconnects
Author :
Koubuchi, Yasushi ; Onuki, Jin ; Suwa, Motoo ; Fukada, Sin-ichi
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Abstract :
Al-Si-Pd alloy with high stress-induced migration resistance was developed for VLSI interconnects. Pd was selected to depress grain boundary diffusion of Al alloys. The microstructures of Al matrices alloyed with Pd and Cu were investigated. The morphologies of precipitation in Al alloy conductors were examined after high-temperature heat treatment. The stress-induced migration resistances of the Al-Si-Pd and Al-Si-Cu were found to be influenced by the microstructures of Al matrices
Keywords :
VLSI; aluminium alloys; grain boundary diffusion; heat treatment; integrated circuit technology; metallisation; palladium alloys; silicon alloys; stress effects; Al alloy conductors; Al matrices; Al-Si-Pd alloy interconnects; AlSiCu; AlSiPd; VLSI interconnects; diffusion depression; grain boundary diffusion; high-temperature heat treatment; metallisation; microstructures; precipitation morphologies; stress-induced migration resistance; Conductors; Copper alloys; Creep; Grain boundaries; Microstructure; Plasma temperature; Samarium alloys; Stress; Testing; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78003
