Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)

Author

Cai, J. ; Rim, K. ; Bryant, A. ; Jenkins, K. ; Ouyang, C. ; Singh, D. ; Ren, Z. ; Lee, K. ; Yin, H. ; Hergenrother, J. ; Kanarsky, T. ; Kumar, A. ; Wang, X. ; Bedell, S. ; Reznicek, A. ; Hovel, H. ; Sadana, D. ; Uriarte, D. ; Mitchell, R. ; Ott, J. ; Mocu

Author_Institution

IBM Semicond. R&D Center, T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

165

Lastpage

168

Abstract

The scaling behavior of current drive enhancements in strained-silicon NFETs on SiGe-on-insulator (SGOI) is reported. SGOI NFET enhancement exhibits only moderate channel length dependence down to sub-50 nm regime, indicating strain-induced enhancement can be sustained in future technology nodes. This is contrary to some previous reports which suggested dramatic reduction of strain-induced NFET current enhancement with channel length scaling. A novel analysis technique was developed to account for the difference in self-heating in SGOI and SOI devices to enable intrinsic device performance comparison. Additive effects of biaxial strain from the Si/SiGe heterostructure and process-induced uniaxial stress are experimentally demonstrated for the first time.

Keywords

Ge-Si alloys; field effect transistors; silicon-on-insulator; SGOI NFET enhancement; Si-SiGe; Si/SiGe heterostructure; SiGe-on-Insulator; biaxial strain; channel length scaling; strained Si FET; uniaxial stress; FETs; Germanium silicon alloys; Heating; Immune system; Performance analysis; Pulse measurements; Research and development; Silicon germanium; Thermal conductivity; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419097

Filename

1419097