A theoretical study on high power generation from double tapered semiconductor laser by using modified beam-propagation method

Author

Jiang, Ziping ; Tsang, H.K. ; McCall, M.W.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong

fYear

1995

fDate

34881

Firstpage

37

Lastpage

40

Abstract

The operation of various tapered stripe devices have been investigated theoretically by using generalized travelling wave equations, where the effects of diffraction and carrier-induced refractive index variation are taken into account. The partial differential equations are solved by using a modified beam-propagation-method, which is computationally intensive, requiring a large number of longitudinal segments and lateral mesh points. The simulation also involves calculating the carrier density by integrating the carrier diffusion equation at time increments of less than 0.5ps, and obtains the full dynamics of filament formation

Keywords

carrier density; laser cavity resonators; laser modes; light diffraction; partial differential equations; refractive index; semiconductor lasers; carrier density; carrier diffusion equation; carrier-induced refractive index variation; double tapered semiconductor laser; filament formation; generalized travelling wave equations; high power generation; lateral mesh points; light diffraction; modified beam-propagation method; partial differential equations; tapered stripe devices; Diffraction; Diode lasers; Laser theory; Optical filters; Optical refraction; Optical variables control; Power generation; Power lasers; Semiconductor lasers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong

Print_ISBN

0-7803-2919-8

Type

conf

DOI

10.1109/HKEDM.1995.520641

Filename

520641