The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes

Author

Nirschl, Th ; Wang, P.F. ; Weber, C. ; Sedlmeir, J. ; Heinrich, R. ; Kakoschke, R. ; Schrüfer, K. ; Holz, J. ; Pacha, C. ; Schulz, T. ; Ostermayr, M. ; Olbrich, A. ; Georgakos, G. ; Ruderer, E. ; Hansch, W. ; Schmitt-Landsiedel, D.

Author_Institution

Inst. for Tech. Electron., Tech. Univ., Munich, Germany

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

195

Lastpage

198

Abstract

This work presents tunneling field effect transistors (TFET) fabricated with 130nm and 90nm process flows. Good performance of the TFET is achieved. A novel mixed TFET/CMOS (TCMOS) logic family exhibits the advantages with respect to power consumption. For the first time experimental results are presented for a TCMOS ring-oscillator based on a p-channel MOSFET and n-channel TFET. The benefits of the TFET used in analog circuits are outlined.

Keywords

MOSFET; analogue circuits; field effect transistors; low-power electronics; tunnel transistors; TCMOS ring-oscillator; TFET/CMOS logic; n-channel TFET; p-channel MOSFET; power consumption; tunneling field effect transistor; ultra-low-voltage analog processes; ultra-low-voltage digital processes; Analog circuits; CMOS process; Doping profiles; Energy consumption; FETs; Logic; MOSFET circuits; Microelectronics; Ring oscillators; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419106

Filename

1419106