DocumentCode
2999496
Title
Room-temperature single-electron transfer and detection with silicon nanodevices
Author
Nishiguchi, Katsuhiko ; Fujiwara, Akira ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo
Author_Institution
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
199
Lastpage
202
Abstract
Transfer and subsequent detection of single electrons are demonstrated at room temperature using a silicon-on-insulator nanodevice. The turnstile, which is composed of two Si-wire-FETs with a fine gate, enables us to transfer single electrons by opening and closing the two FETs alternately. The transferred individual electrons are stored in a single-electron box and detected by the electrometer with single-electron resolution. The present device achieves high-speed transfer and long retention.
Keywords
electron transport theory; silicon-on-insulator; single electron devices; electrometer; room-temperature single-electron transfer; silicon nanodevices; silicon-on-insulator nanodevice; single electron detection; single electron transfer; single-electron box; single-electron resolution; Erbium; FETs; Fabrication; Information science; Laboratories; Oxidation; Silicon on insulator technology; Single electron transistors; Temperature sensors; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419107
Filename
1419107
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