• DocumentCode
    2999496
  • Title

    Room-temperature single-electron transfer and detection with silicon nanodevices

  • Author

    Nishiguchi, Katsuhiko ; Fujiwara, Akira ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    199
  • Lastpage
    202
  • Abstract
    Transfer and subsequent detection of single electrons are demonstrated at room temperature using a silicon-on-insulator nanodevice. The turnstile, which is composed of two Si-wire-FETs with a fine gate, enables us to transfer single electrons by opening and closing the two FETs alternately. The transferred individual electrons are stored in a single-electron box and detected by the electrometer with single-electron resolution. The present device achieves high-speed transfer and long retention.
  • Keywords
    electron transport theory; silicon-on-insulator; single electron devices; electrometer; room-temperature single-electron transfer; silicon nanodevices; silicon-on-insulator nanodevice; single electron detection; single electron transfer; single-electron box; single-electron resolution; Erbium; FETs; Fabrication; Information science; Laboratories; Oxidation; Silicon on insulator technology; Single electron transistors; Temperature sensors; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419107
  • Filename
    1419107