DocumentCode
2999613
Title
A High Efficiency CMOS Class E Power Amplifier
Author
Xiao, Enjun ; Thakkar, Falguni
Author_Institution
Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX
Volume
2
fYear
2006
fDate
6-9 Aug. 2006
Firstpage
281
Lastpage
284
Abstract
A new class E power amplifier is designed for GSM wireless system using 0.25 mum CMOS technology. Soft switch technique is used to improve the power efficiency. The power added efficiency is 67.26%. Power gain is 26 dB. Output power is over 30 dBm.
Keywords
CMOS integrated circuits; cellular radio; power amplifiers; transceivers; CMOS class E power amplifier design; CMOS technology; GSM wireless system; efficiency 67.26 percent; gain 26 dB; power added efficiency; power gain; size 0.25 mum; soft switch technique; transceivers; CMOS technology; High power amplifiers; Parasitic capacitance; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Switches; Transceivers; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
Conference_Location
San Juan
ISSN
1548-3746
Print_ISBN
1-4244-0172-0
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2006.382266
Filename
4267344
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