DocumentCode :
2999613
Title :
A High Efficiency CMOS Class E Power Amplifier
Author :
Xiao, Enjun ; Thakkar, Falguni
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX
Volume :
2
fYear :
2006
fDate :
6-9 Aug. 2006
Firstpage :
281
Lastpage :
284
Abstract :
A new class E power amplifier is designed for GSM wireless system using 0.25 mum CMOS technology. Soft switch technique is used to improve the power efficiency. The power added efficiency is 67.26%. Power gain is 26 dB. Output power is over 30 dBm.
Keywords :
CMOS integrated circuits; cellular radio; power amplifiers; transceivers; CMOS class E power amplifier design; CMOS technology; GSM wireless system; efficiency 67.26 percent; gain 26 dB; power added efficiency; power gain; size 0.25 mum; soft switch technique; transceivers; CMOS technology; High power amplifiers; Parasitic capacitance; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Switches; Transceivers; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
Conference_Location :
San Juan
ISSN :
1548-3746
Print_ISBN :
1-4244-0172-0
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2006.382266
Filename :
4267344
Link To Document :
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