• DocumentCode
    2999613
  • Title

    A High Efficiency CMOS Class E Power Amplifier

  • Author

    Xiao, Enjun ; Thakkar, Falguni

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX
  • Volume
    2
  • fYear
    2006
  • fDate
    6-9 Aug. 2006
  • Firstpage
    281
  • Lastpage
    284
  • Abstract
    A new class E power amplifier is designed for GSM wireless system using 0.25 mum CMOS technology. Soft switch technique is used to improve the power efficiency. The power added efficiency is 67.26%. Power gain is 26 dB. Output power is over 30 dBm.
  • Keywords
    CMOS integrated circuits; cellular radio; power amplifiers; transceivers; CMOS class E power amplifier design; CMOS technology; GSM wireless system; efficiency 67.26 percent; gain 26 dB; power added efficiency; power gain; size 0.25 mum; soft switch technique; transceivers; CMOS technology; High power amplifiers; Parasitic capacitance; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Switches; Transceivers; Zero voltage switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
  • Conference_Location
    San Juan
  • ISSN
    1548-3746
  • Print_ISBN
    1-4244-0172-0
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2006.382266
  • Filename
    4267344