In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110], and (111) Si

Author

Irie, H. ; Kita, K. ; Kyuno, K. ; Toriumi, A.

Author_Institution

Dept. of Mater. Sci., Tokyo Univ., Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

225

Lastpage

228

Abstract

An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

Keywords

MIS structures; electron mobility; elemental semiconductors; hole mobility; internal stresses; inversion layers; silicon; surface morphology; electron mobility enhancement; hole mobility enhancement; in-plane channel directions; in-plane mobility anisotropy; inversion layer mobility characteristics; mobility universality; n-MOS inversion layers; p-MOS inversion layers; surface orientation; uni-axial strain; Anisotropic magnetoresistance; Capacitive sensors; Character recognition; Charge carrier processes; Conductivity; Electron mobility; MOSFET circuits; Materials science and technology; Tensile strain; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419115

Filename

1419115