Title :
In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110], and (111) Si
Author :
Irie, H. ; Kita, K. ; Kyuno, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Sci., Tokyo Univ., Japan
Abstract :
An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.
Keywords :
MIS structures; electron mobility; elemental semiconductors; hole mobility; internal stresses; inversion layers; silicon; surface morphology; electron mobility enhancement; hole mobility enhancement; in-plane channel directions; in-plane mobility anisotropy; inversion layer mobility characteristics; mobility universality; n-MOS inversion layers; p-MOS inversion layers; surface orientation; uni-axial strain; Anisotropic magnetoresistance; Capacitive sensors; Character recognition; Charge carrier processes; Conductivity; Electron mobility; MOSFET circuits; Materials science and technology; Tensile strain; Tensile stress;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419115
