Title :
Package-strain-enhanced device and circuit performance
Author :
Maikap, S. ; Liao, M.H. ; Yuan, F. ; Lee, M.H. ; Huang, C.-F. ; Chang, S.T. ; Liu, C.W.
Author_Institution :
Deparment of Electr. Eng., National Taiwan Univ., Taipei, Taiwan
Abstract :
The hole mobility enhancement can be as high as ∼18% for SiO2 and ∼20% for high-k HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-k gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device displays the opposite. The nonoptimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.
Keywords :
MOSFET; dielectric materials; hafnium compounds; hole mobility; internal stresses; silicon compounds; 100 C; HfO2; NMOS channel; SiO2; biaxial tensile strain; bulk Si PMOS; drain current; high-k HfO2 gate stack dielectrics; hole mobility enhancement; nonoptimized ring oscillator; package strain-enhanced device performance; substrate-strained Si device; uniaxial compressive strain; Circuit optimization; Degradation; Displays; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Packaging; Ring oscillators; Tensile strain; Uniaxial strain;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419117
