Title :
Metal emitter SiGe:C HBTs
Author :
Donkers, J.J.T.M. ; Vanhoucke, T. ; Agarwal, Prabhakar ; Hueting, R.J.E. ; Meunier-Beillard, P. ; Vijayaraghavan, M.N. ; Magnée, P. H C ; Verheijen, M.A. ; de Kort, R. ; Slotboom, J.W.
Author_Institution :
Philips Res. Leuven, Belgium
Abstract :
SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, fT, but low open base breakdown voltages, BVCEO, due to the relatively high current gain, hFE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, IB without reducing the collector current, IC. Hence, the BVCEO is increased without affecting the fT. Furthermore, this metal emitter reduces the emitter series resistance, RE, and increases the fT compared with a mono-emitter. SiGe:C HBTs with fT=230GHz and BVCEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; millimetre wave bipolar transistors; 1.8 V; 230 GHz; SiGe:C; SiGe:C HBT; base current; collector current; current gain; cut-off frequency; emitter series resistance; heterojunction bipolar transistors; metal emitter; mono-emitter silicidation; open base breakdown voltage; self-aligned integration scheme; Atomic layer deposition; Bipolar transistors; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Nickel; Silicidation; Silicon germanium; Temperature;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419121
