DocumentCode :
2999901
Title :
Relaxation-based harmonic balance technique for semiconductor device simulation
Author :
Troyanovsky, B. ; Zhiping Yu ; So, L. ; Dutton, R.W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fYear :
1995
fDate :
5-9 Nov. 1995
Firstpage :
700
Lastpage :
703
Abstract :
Harmonic and intermodulation distortion effects play an important role in numerous analog applications, particularly in such areas as wireless communication systems. In this paper, we present a two-dimensional harmonic balance semiconductor device simulator which accurately models these nonlinear effects at the physical (drift-diffusion) level. The simulator is based on Stanford University´s PISCES code, and supports the full range of physical models and features present in the time-domain version of the program. A modified block Gauss-Seidel-Newton nonlinear relaxation scheme is developed to efficiently handle the extremely large size of two-dimensional harmonic balance semiconductor device simulation problems.
Keywords :
circuit analysis computing; intermodulation distortion; relaxation theory; semiconductor device models; Gauss-Seidel-Newton nonlinear relaxation; harmonic balance technique; semiconductor device simulation; two-dimensional harmonic balance; Analytical models; Circuit simulation; Ear; Frequency domain analysis; Gaussian processes; Intermodulation distortion; Radio frequency; Semiconductor devices; Time domain analysis; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 1995. ICCAD-95. Digest of Technical Papers., 1995 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA, USA
ISSN :
1092-3152
Print_ISBN :
0-8186-8200-0
Type :
conf
DOI :
10.1109/ICCAD.1995.480206
Filename :
480206
Link To Document :
بازگشت