DocumentCode
3000115
Title
Challenges for the integration of metal gate electrodes
Author
Schaeffer, J.K. ; Capasso, C. ; Fonseca, L.R.C. ; Samavedam, S. ; Gilmer, D.C. ; Liang, Y. ; Kalpat, S. ; Adetutu, B. ; Tseng, H.-H. ; Shiho, Y. ; Demkov, A. ; Hegde, R. ; Taylor, W.J. ; Gregory, R. ; Jiang, J. ; Luckowski, E. ; Raymond, M.V. ; Moore, K.
Author_Institution
Adv. Products R&D Lab., Freescale Semicond. Inc., Austin, TX, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
287
Lastpage
290
Abstract
Integration challenges for metal gate electrodes including the presence of Fermi level pinning and the impact of interface chemistry on the effective metal work function are discussed. Gate stack thermal instabilities are explored, and for the first time results using tantalum-carbon based electrodes are presented.
Keywords
CMOS integrated circuits; Fermi level; carbon; electrodes; interface states; metallisation; tantalum; thermal stability; work function; C; Fermi level pinning; Ta; gate stack thermal instability; interface chemistry; metal gate electrodes; metal work function; tantalum-carbon based electrodes; Annealing; Capacitance; Chemistry; Dielectrics; Electrodes; FETs; Hafnium oxide; Laboratories; Platinum; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419135
Filename
1419135
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