• DocumentCode
    3000121
  • Title

    A new diode model formulation for electro-thermal analysis

  • Author

    D´Amore, Dario ; Maffezzoni, Paolo

  • Author_Institution
    Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
  • Volume
    6
  • fYear
    1999
  • fDate
    36342
  • Firstpage
    22
  • Abstract
    Thermal effects due to the self heating of semiconductor devices is efficiently included in electrical simulators adding an equivalent RC network that models the thermal phenomenon. In this paper we consider the numerical problems that arise in the electro-thermal simulation of circuits containing strongly heating diodes. To circumvent these problems, we propose a new formulation of the diode equation which is intended to separate thermal terms from electrical ones. The numerical robustness of the proposed formulation is investigated when the Newton-Raphson solution algorithm is employed. It is shown that this new formulation allows the simulation of strong heating conditions that are commonly critical when conventional electro-thermal tools are used
  • Keywords
    Newton-Raphson method; equivalent circuits; semiconductor device models; semiconductor diodes; thermal analysis; Newton-Raphson solution algorithm; diode equation; diode model formulation; electro-thermal analysis; self heating; semiconductor devices; strong heating conditions; Circuit simulation; Equations; Failure analysis; Frequency; Multidimensional systems; Resistance heating; Robustness; Semiconductor diodes; Silicon; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-5471-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1999.780084
  • Filename
    780084