Title :
A new diode model formulation for electro-thermal analysis
Author :
D´Amore, Dario ; Maffezzoni, Paolo
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
Abstract :
Thermal effects due to the self heating of semiconductor devices is efficiently included in electrical simulators adding an equivalent RC network that models the thermal phenomenon. In this paper we consider the numerical problems that arise in the electro-thermal simulation of circuits containing strongly heating diodes. To circumvent these problems, we propose a new formulation of the diode equation which is intended to separate thermal terms from electrical ones. The numerical robustness of the proposed formulation is investigated when the Newton-Raphson solution algorithm is employed. It is shown that this new formulation allows the simulation of strong heating conditions that are commonly critical when conventional electro-thermal tools are used
Keywords :
Newton-Raphson method; equivalent circuits; semiconductor device models; semiconductor diodes; thermal analysis; Newton-Raphson solution algorithm; diode equation; diode model formulation; electro-thermal analysis; self heating; semiconductor devices; strong heating conditions; Circuit simulation; Equations; Failure analysis; Frequency; Multidimensional systems; Resistance heating; Robustness; Semiconductor diodes; Silicon; Temperature dependence;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780084