Title :
Evaluation of Fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO2 under high temperature exposure
Author :
Jha, Rashmi ; Lee, Jaehoon ; Chen, Bei ; Lazar, Heather ; Gurganus, Jason ; Biswas, Nivedita ; Majhi, Prashant ; Brown, George ; Misra, Veena
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The workfunction behavior and stability of several candidate metal gate electrodes on HfO2 was carefully examined and correlated with processing parameters such as anneal temperatures and oxygen exposures. Transition metals and their nitrides, binary metal alloys and refractory metals were studied on MOCVD HfO2 dielectrics of varying thicknesses. Binary low work function Mo-Ta alloys were also investigated on HfO2.
Keywords :
Fermi level; MOCVD; atomic layer deposition; dielectric materials; hafnium compounds; molybdenum alloys; rapid thermal annealing; tantalum alloys; work function; Fermi level pinning; HfO2; MOCVD; Mo-Ta alloys; MoTa; anneal temperatures; atomic layer deposition; binary metal alloys; dielectric material; high temperature exposure; metal gate electrodes; metal gate stability; oxygen exposures; refractory metals; transition metals; workfunction behavior; Annealing; Capacitance-voltage characteristics; Channel bank filters; Dielectrics; Displays; Electrodes; Hafnium oxide; MOCVD; Stability; Temperature;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419137
