DocumentCode
3000232
Title
Numerical simulation of SPIR detectors
Author
Jo, Nam-Hong ; Yoo, Sang-Dong ; Cho, Byung-Seob ; Kim, Hyeong-Rae ; Kwack, Kae-Dal ; Lee, Sang-Don ; Kim, Hong-Kuk ; Kim, Jae-Mook
Author_Institution
Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea
fYear
1995
fDate
34881
Firstpage
55
Lastpage
59
Abstract
A two-dimensional numerical simulation has been used to analyze SPIR detectors. Simulation models are based on a current continuity equation, which accounts for carrier generation, recombination and drift-diffusion processes as functions of position and time. We investigate the transit time dispersion due to a non-uniform electric field for the various read-out geometries and the variation of read-out voltage with the mismatch between drift velocity of photogenerated carriers and scan velocity of incident signal. The results have been used to derive an approach for optimization of device structures and operation conditions
Keywords
electron-hole recombination; infrared detectors; semiconductor device models; SPIR detectors; carrier generation; current continuity equation; drift velocity; drift-diffusion; nonuniform electric field; optimization; photogenerated carriers; read-out voltage; recombination; scan velocity; self signal processing infrared detectors; transit time dispersion; two-dimensional numerical simulation; Charge carrier processes; Educational institutions; Equations; Geometry; Infrared detectors; Numerical simulation; Radiative recombination; Spatial resolution; Spontaneous emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong
Print_ISBN
0-7803-2919-8
Type
conf
DOI
10.1109/HKEDM.1995.520645
Filename
520645
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