DocumentCode :
3000232
Title :
Numerical simulation of SPIR detectors
Author :
Jo, Nam-Hong ; Yoo, Sang-Dong ; Cho, Byung-Seob ; Kim, Hyeong-Rae ; Kwack, Kae-Dal ; Lee, Sang-Don ; Kim, Hong-Kuk ; Kim, Jae-Mook
Author_Institution :
Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea
fYear :
1995
fDate :
34881
Firstpage :
55
Lastpage :
59
Abstract :
A two-dimensional numerical simulation has been used to analyze SPIR detectors. Simulation models are based on a current continuity equation, which accounts for carrier generation, recombination and drift-diffusion processes as functions of position and time. We investigate the transit time dispersion due to a non-uniform electric field for the various read-out geometries and the variation of read-out voltage with the mismatch between drift velocity of photogenerated carriers and scan velocity of incident signal. The results have been used to derive an approach for optimization of device structures and operation conditions
Keywords :
electron-hole recombination; infrared detectors; semiconductor device models; SPIR detectors; carrier generation; current continuity equation; drift velocity; drift-diffusion; nonuniform electric field; optimization; photogenerated carriers; read-out voltage; recombination; scan velocity; self signal processing infrared detectors; transit time dispersion; two-dimensional numerical simulation; Charge carrier processes; Educational institutions; Equations; Geometry; Infrared detectors; Numerical simulation; Radiative recombination; Spatial resolution; Spontaneous emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong
Print_ISBN :
0-7803-2919-8
Type :
conf
DOI :
10.1109/HKEDM.1995.520645
Filename :
520645
Link To Document :
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