• DocumentCode
    3000232
  • Title

    Numerical simulation of SPIR detectors

  • Author

    Jo, Nam-Hong ; Yoo, Sang-Dong ; Cho, Byung-Seob ; Kim, Hyeong-Rae ; Kwack, Kae-Dal ; Lee, Sang-Don ; Kim, Hong-Kuk ; Kim, Jae-Mook

  • Author_Institution
    Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea
  • fYear
    1995
  • fDate
    34881
  • Firstpage
    55
  • Lastpage
    59
  • Abstract
    A two-dimensional numerical simulation has been used to analyze SPIR detectors. Simulation models are based on a current continuity equation, which accounts for carrier generation, recombination and drift-diffusion processes as functions of position and time. We investigate the transit time dispersion due to a non-uniform electric field for the various read-out geometries and the variation of read-out voltage with the mismatch between drift velocity of photogenerated carriers and scan velocity of incident signal. The results have been used to derive an approach for optimization of device structures and operation conditions
  • Keywords
    electron-hole recombination; infrared detectors; semiconductor device models; SPIR detectors; carrier generation; current continuity equation; drift velocity; drift-diffusion; nonuniform electric field; optimization; photogenerated carriers; read-out voltage; recombination; scan velocity; self signal processing infrared detectors; transit time dispersion; two-dimensional numerical simulation; Charge carrier processes; Educational institutions; Equations; Geometry; Infrared detectors; Numerical simulation; Radiative recombination; Spatial resolution; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong
  • Print_ISBN
    0-7803-2919-8
  • Type

    conf

  • DOI
    10.1109/HKEDM.1995.520645
  • Filename
    520645